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| INCHANGE Semiconductor isc RF Product Specification isc Silicon NPN RF Transistor 2SC2845 DESCRIPTION *Low Noise *High Gain *High Current-Gain Bandwidth Product APPLICATIONS *Designed for use in UHF low noise amplifier. ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 25 V VCEO Collector-Emitter Voltage 12 V VEBO Emitter-Base Voltage 2.5 V IC Collector Current-Continuous 70 mA PC Collector Power Dissipation @TC=25 0.2 W TJ Junction Temperature 125 Tstg Storage Temperature Range -55~125 isc Websitewww.iscsemi.cn INCHANGE Semiconductor isc RF Product Specification isc Silicon NPN RF Transistor ELECTRICAL CHARACTERISTICS TC=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN 2SC2845 TYP. MAX UNIT ICBO Collector Cutoff Current VCB= 15V; IE= 0 0.1 A IEBO Emitter Cutoff Current VEB= 2V; IC= 0 0.1 A hFE DC Current Gain IC= 20mA ; VCE= 10V 40 200 fT Current-Gain--Bandwidth Product IE= -20mA ; VCE= 10V 4.5 GHz COB Output Capacitance IE= 0; VCB= 10V; f= 1.0MHz 1.0 1.5 pF S21e2 Insertion Power Gain IC= 20mA; VCE= 10V; f= 0.8GHz 8.5 10.5 dB GUM Power Gain 10 12 dB NF Noise Figure IC= 5mA; VCE= 10V; f= 0.8GHz 1.8 3 dB isc Websitewww.iscsemi.cn 2 |
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